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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Osa numero
NCP5106BDR2G
Kategoria
Power Chip > Gate Driver IC
Valmistaja/merkki
onsemi (Ansemi)
Kapselointi
SOIC-8-150mil
Pakkaus
taping
Pakettien määrä
2500
Kuvaus
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Varastossa 75348 PCS
Yhteystiedot
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Avainsanat aiheesta NCP5106BDR2G
NCP5106BDR2G Elektroniset komponentit
NCP5106BDR2G Myynti
NCP5106BDR2G Toimittaja
NCP5106BDR2G Jakelija
NCP5106BDR2G Tietotaulukko
NCP5106BDR2G Kuvat
NCP5106BDR2G Hinta
NCP5106BDR2G Tarjous
NCP5106BDR2G Alin hinta
NCP5106BDR2G Hae
NCP5106BDR2G Ostaminen
NCP5106BDR2G Chip