Toshiba Semiconductor and Storage
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RN4987FE,LF(CT
DataSheets

RN4987FE,LF(CT

TRANS NPN/PNP PREBIAS 0.1W ES6
Osa numero
RN4987FE,LF(CT
Valmistaja/merkki
Toshiba Semiconductor and Storage
Osan tila
Active
Asennustyyppi
Surface Mount
Paketti / kotelo
SOT-563, SOT-666
Teho - Max
100mW
Toimittajan laitepaketti
ES6
Transistorin tyyppi
1 NPN, 1 PNP - Pre-Biased (Dual)
Virta - Keräin (Ic) (Max)
100mA
Jännite – kollektorin lähettimen erittely (maks.)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Virta - Keräimen katkaisu (maks.)
500nA
DC-virran vahvistus (hFE) (min) @ Ic, Vce
80 @ 10mA, 5V
Taajuus - siirtymä
250MHz, 200MHz
Vastus - kanta (R1)
10 kOhms
Vastus - Emitter Base (R2)
47 kOhms
Pyydä tarjous
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Varastossa 47022 PCS
Yhteystiedot
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Avainsanat aiheesta RN4987FE,LF(CT
RN4987FE,LF(CT Elektroniset komponentit
RN4987FE,LF(CT Myynti
RN4987FE,LF(CT Toimittaja
RN4987FE,LF(CT Jakelija
RN4987FE,LF(CT Tietotaulukko
RN4987FE,LF(CT Kuvat
RN4987FE,LF(CT Hinta
RN4987FE,LF(CT Tarjous
RN4987FE,LF(CT Alin hinta
RN4987FE,LF(CT Hae
RN4987FE,LF(CT Ostaminen
RN4987FE,LF(CT Chip