Toshiba Semiconductor and Storage
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TK4A65DA(STA4,Q,M)
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TK4A65DA(STA4,Q,M)

MOSFET N-CH 650V 3.5A TO-220SIS
Osa numero
TK4A65DA(STA4,Q,M)
Valmistaja/merkki
Toshiba Semiconductor and Storage
Sarja
π-MOSVII
Osan tila
Active
Pakkaus
Tube
Tekniikka
MOSFET (Metal Oxide)
Käyttölämpötila
150°C (TJ)
Asennustyyppi
Through Hole
Paketti / kotelo
TO-220-3 Full Pack
Toimittajan laitepaketti
TO-220SIS
Tehonhäviö (maks.)
35W (Tc)
FET-tyyppi
N-Channel
FET-ominaisuus
-
Tyhjennys lähdejännite (Vdss)
650V
Virta - Jatkuva tyhjennys (Id) @ 25°C
3.5A (Ta)
Rds päällä (maks.) @ Id, Vgs
1.9 Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Portin lataus (Qg) (Max) @ Vgs
12nC @ 10V
Tulokapasitanssi (Ciss) (Max) @ Vds
600pF @ 25V
Taajuusmuuttajan jännite (Max Rds On, Min Rds On)
10V
Vgs (max)
±30V
Pyydä tarjous
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Varastossa 54175 PCS
Yhteystiedot
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Avainsanat aiheesta TK4A65DA(STA4,Q,M)
TK4A65DA(STA4,Q,M) Elektroniset komponentit
TK4A65DA(STA4,Q,M) Myynti
TK4A65DA(STA4,Q,M) Toimittaja
TK4A65DA(STA4,Q,M) Jakelija
TK4A65DA(STA4,Q,M) Tietotaulukko
TK4A65DA(STA4,Q,M) Kuvat
TK4A65DA(STA4,Q,M) Hinta
TK4A65DA(STA4,Q,M) Tarjous
TK4A65DA(STA4,Q,M) Alin hinta
TK4A65DA(STA4,Q,M) Hae
TK4A65DA(STA4,Q,M) Ostaminen
TK4A65DA(STA4,Q,M) Chip