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NSS1C200MZ4T1G PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A

NSS1C200MZ4T1G

PNP 100V 2A Low Saturation Transistor, PNP, 100 V, 2.0 A
Osa numero
NSS1C200MZ4T1G
Kategoria
Triode/MOS Tube/Transistor > Triode(BJT)
Valmistaja/merkki
onsemi (Ansemi)
Kapselointi
SOT-223
Pakkaus
taping
Pakettien määrä
1000
Kuvaus
Low saturation voltage bipolar junction transistors (BJTs) are tiny surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.
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Varastossa 53608 PCS
Yhteystiedot
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Avainsanat aiheesta NSS1C200MZ4T1G
NSS1C200MZ4T1G Elektroniset komponentit
NSS1C200MZ4T1G Myynti
NSS1C200MZ4T1G Toimittaja
NSS1C200MZ4T1G Jakelija
NSS1C200MZ4T1G Tietotaulukko
NSS1C200MZ4T1G Kuvat
NSS1C200MZ4T1G Hinta
NSS1C200MZ4T1G Tarjous
NSS1C200MZ4T1G Alin hinta
NSS1C200MZ4T1G Hae
NSS1C200MZ4T1G Ostaminen
NSS1C200MZ4T1G Chip