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NSS1C201LT1G NPN 100V 2A 100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor

NSS1C201LT1G

NPN 100V 2A 100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor
Osa numero
NSS1C201LT1G
Kategoria
Triode/MOS Tube/Transistor > Triode(BJT)
Valmistaja/merkki
onsemi (Ansemi)
Kapselointi
SOT-23
Pakkaus
taping
Pakettien määrä
3000
Kuvaus
Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control.
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Varastossa 91292 PCS
Yhteystiedot
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Avainsanat aiheesta NSS1C201LT1G
NSS1C201LT1G Elektroniset komponentit
NSS1C201LT1G Myynti
NSS1C201LT1G Toimittaja
NSS1C201LT1G Jakelija
NSS1C201LT1G Tietotaulukko
NSS1C201LT1G Kuvat
NSS1C201LT1G Hinta
NSS1C201LT1G Tarjous
NSS1C201LT1G Alin hinta
NSS1C201LT1G Hae
NSS1C201LT1G Ostaminen
NSS1C201LT1G Chip